tm september 2006 FDMC2610 n-channel ultrafet trench ? mosfet ?2006 fairchild semiconductor corporation FDMC2610 rev. b www.fairchildsemi.com 1 FDMC2610 n-channel ultrafet trench ? mosfet 200v, 9.5a, 200m ? features ? max r ds(on) = 200m ? at v gs = 10v, i d = 2.2a ? max r ds(on) = 215m ? at v gs = 6v, i d = 1.5a ? low profile - 1mm max in a microfet 3.3 x 3.3 mm ? rohs compliant general description this n-channel mosfet is a rugged gate version of fairchild semiconductor?s advanced power trench process. it has been optimized for power management applications. application ? dc - dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -continuous (silicon limited) 200 v v gs gate to source voltage 20 v i d drain current -continuous (silicon limited) t c = 25c 9.5 a -continuous t a = 25c (note 1a) 2.2 -pulsed 15 p d power dissipation t c = 25c 42 w power dissipation t a = 25c (note 1a) 2.1 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 3 c/w r ja thermal resistance, junction to ambient (note 1a) 60 device marking device package reel size tape width quantity FDMC2610 FDMC2610 mlp3.3x3.3 7?? 8mm 3000 units 1 2 3 4 5 6 7 8 d d d d g s s s bottom top mlp 3.3x3.3 4 3 2 1 5 6 7 8
FDMC2610 n-channel ultrafet trench ? mosfet FDMC2610 rev. b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 200 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 199 mv/ c i dss zero gate voltage drain current v ds = 160v, 1 a v gs = 0v t j = 125 c 10 i gss gate to source leakage current v gs = 20v, v gs = 0v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2 3.2 4 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -9.9 mv/ c r ds(on) drain to source on resistance v gs = 10v, i d = 2.2a 175 200 m ? v gs = 6v, i d = 1.5a 188 215 v gs = 10v, i d = 2.2a t j = 125 c 347 397 g fs forward transconductance v ds = 5v, i d = 2.2a 7 s c iss input capacitance v ds = 100v, v gs = 0v, f = 1mhz 720 960 pf c oss output capacitance 41 55 pf c rss reverse transfer capacitance 12 20 pf r g gate resistance f = 1mhz 0.7 ? t d(on) turn-on delay time v dd = 100v, i d = 2.2a v gs = 10v, r gen = 24 ? 17 31 ns t r rise time 13 24 ns t d(off) turn-off delay time 29 47 ns t f fall time 16 29 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 100v i d = 2.2a 12.3 18 nc q gs gate to source gate charge 3 nc q gd gate to drain ?miller? charge 3.6 nc v sd source to drain diode forward voltage v gs = 0v, i s = 2.2a (note 2) 0.8 1.2 v t rr reverse recovery time i f = 2.2a, di/dt = 100a/ s 69 104 ns q rr reverse recovery charge 114 171 nc notes: 1: r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2: pulse test: pulse width < 30 0 s, duty cycle < 2.0%. a. 60c/w when mounted on a 1 in 2 pad of 2 oz copper b. 150c/w when mounted on a minimum pad of 2 oz copper
FDMC2610 n-channel ultrafet trench ? mosfet FDMC2610 rev. b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. on region characteristics figure 2. n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e vs junction temperature figure 4. o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics figure 6. s o u r c e t o d r a i n d i o d e forward voltage vs source current 0123 0 5 10 15 pulse duration = 80 s duty cycle = 0.5%max v gs = 4.5v v gs = 7v v gs = 5v v gs = 6v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) 03691215 0.8 1.0 1.2 1.4 1.6 1.8 v gs = 4.5v normalized drain to source on-resistance i d , drain current(a) v gs = 7v v gs = 6v v gs = 5v v gs = 10v pulse duration = 80 s duty cycle = 0.5%max -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 pulse duration = 80 s duty cycle = 0.5%max i d =2.2a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) 45678910 100 200 300 400 500 600 t a = 25 o c t a = 150 o c i d = 1.4a pulse duration = 80 s duty cycle = 0.5%max r ds(on) , drain to source on-resistance ( m ? ) v gs , gate to source voltage (v) 23456 0 3 6 9 12 pulse duration = 80 s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 20
FDMC2610 n-channel ultrafet trench ? mosfet FDMC2610 rev. b www.fairchildsemi.com 4 figure 7. gate charge characteristics figure 8. c a p a c i t a n c e v s d r a i n to source voltage figure 9. u n c l a m p e d i n d u c t i v e switching capability figure 10. m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area figure 12. s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted 03691215 0 2 4 6 8 10 v dd = 100v v dd =50v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 150v 0.1 1 10 100 10 100 1000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage (v) 10 -3 10 -2 10 -1 10 0 1 2 3 4 t j = 25 o c t j = 125 o c i as , avalanche current ( a ) t av , time in avalanche(ms) 25 50 75 100 125 150 0 2 4 6 8 10 r jc = 3 o c/w v gs = 6v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) 0.1 1 10 100 1e-3 0.01 0.1 1 10 10s dc 1s 100ms 10ms 1ms 100us single pulse t j = max rated t a = 25 o c operation in this area may be limited by r ds(on) i d , drain current (a) v ds , drain to source voltage (v) 30 700 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 0.5 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 200 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- -
FDMC2610 n-channel ultrafet trench ? mosfet FDMC2610 rev. b www.fairchildsemi.com 5 figure 13. transient thermal response curve typical characteristics t j = 25c unless otherwise noted 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.01 0.1 1 0.003 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a
FDMC2610 n-channel ultrafet trench ? mosfet FDMC2610 rev. b www.fairchildsemi.com 6
FDMC2610 rev. b www.fairchildsemi.com 7 FDMC2610 n-channel uitrafet trench ? mosfet rev. i20 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor th e rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not author ized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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